GE-282 NPN Silicon RF Power Output Amplifier Transistor

The GE-282 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. 40W Minimum with Greater than 10dB Gain. Equal to NTE318

• Withstands Severe Mismatch under Operating Conditions
• Emitter Ballasted
• Low Inductance Stripline Package
• Collector Base Voltage, VCBO: 36V
• Collector−Emitter Voltage VCEO: 18V
• Emitter−Base Voltage,VEBO : 4V
• Maximum Collector Current,IC : 6A
• Total Device Dissipation (+25°C), PT: 80W