Type Designator: 2N319 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.225 W Maximum Collector-Base Voltage |Vcb|: 25 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 0.2 A Max. Operating Junction Temperature (Tj): 85 °C Transition Frequency (ft): 1 MHz Collector Capacitance (Cc): 50 pF Forward Current Transfer Ratio (hFE), MIN: 35