2N6506 200vrm 16A Silicon Controlled Rectifier

2N6506 Silicon Controlled Rectifier

• Type: SCR 
     Maximum peak gate power (P_GM): 20 W 
     Maximum repetitive peak and off-state voltage (V_DRM): 200 V 
     Maximum average on-state current (I_T(AVR)): 16 A 
     Maximum RMS on-state current (I_T(RMS)): 25 A 
     Non repetitive surge peak on-state current (I_TSM): 255 A 
     Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs 
     Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C 
     Junction to case thermal resistance (R_TH(j-c)): 1.1 K/W 
     Peak on-state voltage drop (V_TM): 1.8 V 
     Triggering gate current (I_GT): 40 mA