2N3856 NPN Small Amplifier Transistor .2W 18V

2N3856 NPN Silicon Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.2 W
     Maximum Collector-Base Voltage |Vcb|: 18 V
     Maximum Collector-Emitter Voltage |Vce|: 18 V
     Maximum Emitter-Base Voltage |Veb|: 4 V
     Maximum Collector Current |Ic max|: 0.1 A
     Max. Operating Junction Temperature (Tj): 100 °C
     Transition Frequency (ft): 140 MHz
     Collector Capacitance (Cc): 3.5 pF
     Forward Current Transfer Ratio (hFE), MIN: 100