Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.06 W Maximum Collector-Base Voltage |Vcb|: 15 V Maximum Collector-Emitter Voltage |Vce|: 12 V Maximum Emitter-Base Voltage |Veb|: 2 V Maximum Collector Current |Ic max|: 0.05 A Max. Operating Junction Temperature (Tj): 100 °C Transition Frequency (ft): 150 MHz Collector Capacitance (Cc): 3 pF Forward Current Transfer Ratio (hFE), MIN: 20