Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.25 W Maximum Collector-Base Voltage |Vcb|: 35 V Maximum Emitter-Base Voltage |Veb|: 30 V Maximum Collector Current |Ic max|: 0.5 A Max. Operating Junction Temperature (Tj): 100 °C Transition Frequency (ft): 2 MHz Forward Current Transfer Ratio (hFE), MIN: 50