2N929 Silicon NPN transistor

2N929 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.3 W
     Maximum Collector-Base Voltage |Vcb|: 45 V
     Maximum Collector-Emitter Voltage |Vce|: 45 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 0.05 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 30 MHz
     Collector Capacitance (Cc): 6 pF
     Forward Current Transfer Ratio (hFE), MIN: 40