2N869A / HEPS0013 Silicon NPN transistor

2N869A NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.36 W
     Maximum Collector-Base Voltage |Vcb|: 25 V
     Maximum Collector-Emitter Voltage |Vce|: 18 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 0.2 A
     Max. Operating Junction Temperature (Tj): 175 °C
     Transition Frequency (ft): 400 MHz
     Collector Capacitance (Cc): 6 pF
     Forward Current Transfer Ratio (hFE), MIN: 40