2N647 25V .05A NPN Germanium .1W Transistor

2N647 25V 0.05A NPN 

• Material of Transistor: Ge
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.1 W
     Maximum Collector-Base Voltage |Vcb|: 25 V
     Maximum Collector-Emitter Voltage |Vce|: 25 V
     Maximum Emitter-Base Voltage |Veb|: 12 V
     Maximum Collector Current |Ic max|: 0.05 A
     Max. Operating Junction Temperature (Tj): 130 °C
     Transition Frequency (ft): 35 MHz
     Collector Capacitance (Cc): 4 pF
     Forward Current Transfer Ratio (hFE), MIN: 50