Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.25 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 35 V Maximum Collector Current |Ic max|: 0.05 A Max. Operating Junction Temperature (Tj): 100 °C Transition Frequency (ft): 0.3 MHz Forward Current Transfer Ratio (hFE), MIN: 25