Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.2 W Maximum Collector-Base Voltage |Vcb|: 15 V Maximum Collector-Emitter Voltage |Vce|: 15 V Maximum Emitter-Base Voltage |Veb|: 2 V Maximum Collector Current |Ic max|: 0.025 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 5 MHz Collector Capacitance (Cc): 8 pF Forward Current Transfer Ratio (hFE), MIN: 60