2N175 10V 0.002A PNP Ge .02W Transistor

2N175 25V 0.07A PNP 

• Material of Transistor: Ge
     Polarity: PNP
     Maximum Collector Power Dissipation (Pc): 0.02 W
     Maximum Collector-Base Voltage |Vcb|: 10 V
     Maximum Collector-Emitter Voltage |Vce|: 10 V
     Maximum Emitter-Base Voltage |Veb|: 10 V
     Maximum Collector Current |Ic max|: 0.002 A
     Max. Operating Junction Temperature (Tj): 85 °C
     Transition Frequency (ft): 0.3 MHz
     Collector Capacitance (Cc): 36 pF
     Forward Current Transfer Ratio (hFE), MIN: 65