2N751 Silicon NPN epitaxial planar transistor 20V .2W

2N751 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.2 W
     Maximum Collector-Base Voltage |Vcb|: 20 V
     Maximum Collector-Emitter Voltage |Vce|: 20 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 0.02 A
     Max. Operating Junction Temperature (Tj): 175 °C
     Transition Frequency (ft): 20 MHz
     Forward Current Transfer Ratio (hFE), MIN: 30
  
• Case U8