2N719A SI NPN epitaxial planar transistor 120V .5W

2N719A NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.5 W
     Maximum Collector-Base Voltage |Vcb|: 120 V
     Maximum Collector-Emitter Voltage |Vce|: 60 V
     Maximum Emitter-Base Voltage |Veb|: 7 V
     Maximum Collector Current |Ic max|: 1 A
     Max. Operating Junction Temperature (Tj): 175 °C
     Transition Frequency (ft): 40 MHz
     Collector Capacitance (Cc): 15 pF
     Forward Current Transfer Ratio (hFE), MIN: 20