2N717 SI NPN epitaxial planar transistor 60V .4W

2N717 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.4 W
     Maximum Collector-Base Voltage |Vcb|: 60 V
     Maximum Collector-Emitter Voltage |Vce|: 28 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 0.5 A
     Max. Operating Junction Temperature (Tj): 175 °C
     Transition Frequency (ft): 40 MHz
     Collector Capacitance (Cc): 35 pF
     Forward Current Transfer Ratio (hFE), MIN: 20