2N708 SI NPN epitaxial planar transistor 40V .36W

2N708 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.36 W
     Maximum Collector-Base Voltage |Vcb|: 40 V
     Maximum Collector-Emitter Voltage |Vce|: 15 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 0.2 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 300 MHz
     Collector Capacitance (Cc): 8 pF
     Forward Current Transfer Ratio (hFE), MIN: 30