Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.36 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 15 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.2 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 300 MHz Collector Capacitance (Cc): 8 pF Forward Current Transfer Ratio (hFE), MIN: 30