2N6053 HEPS9141 PNP 60V 8A Silicon Transistor 100W

2N6053 PNP 60V 200Watt Silicon Transistor

• Material of Transistor: Si
     Polarity: PNP
     Maximum Collector Power Dissipation (Pc): 100 W
     Maximum Collector-Base Voltage |Vcb|: 60 V
     Maximum Collector-Emitter Voltage |Vce|: 60 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 8 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 4 MHz
     Collector Capacitance (Cc): 300 pF
     Forward Current Transfer Ratio (hFE), MIN: 750
     Package: TO3