2N5179 NPN Transistor for VHF and UHF applications

2N5179 NPN  Silicon Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.2 W
     Maximum Collector-Base Voltage |Vcb|: 20 V
     Maximum Collector-Emitter Voltage |Vce|: 12 V
     Maximum Emitter-Base Voltage |Veb|: 2 V
     Maximum Collector Current |Ic max|: 0.05 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 900 MHz
     Collector Capacitance (Cc): 1 pF
     Forward Current Transfer Ratio (hFE), MIN: 25