2N5657 NPN Power Transistor .5 Amp 350V 20W

2N5657 NPN Silicon Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 20 W
     Maximum Collector-Base Voltage |Vcb|: 350 V
     Maximum Collector-Emitter Voltage |Vce|: 350 V
     Maximum Collector Current |Ic max|: 0.5 A
     Max. Operating Junction Temperature (Tj): 150 °C
     Transition Frequency (ft): 10 MHz
     Forward Current Transfer Ratio (hFE), MIN: 30
  
• TO126 case