2N5067 NPN Power Transistor 5 Amp 40V 87.5W

2N5067 NPN Silicon RF Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 87 W
     Maximum Collector-Base Voltage |Vcb|: 40 V
     Maximum Collector-Emitter Voltage |Vce|: 40 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 5 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 4 MHz
     Forward Current Transfer Ratio (hFE), MIN: 20
  
• TO3 case