2N5589 / HEPS3005 NPN High Frequency Transistor

2N5589 HEPS3005 NPN Silicon RF Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 3 W
     Maximum Collector-Base Voltage |Vcb|: 36 V
     Maximum Collector-Emitter Voltage |Vce|: 18 V
     Maximum Emitter-Base Voltage |Veb|: 4 V
     Maximum Collector Current |Ic max|: 0.6 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 175 MHz
     Collector Capacitance (Cc): 30 pF
     Forward Current Transfer Ratio (hFE), MIN: 5
• Case TO128