2N5050 NPN Power Transistor 40W 125V

2N5050 NPN Silicon Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 40 W
     Maximum Collector-Base Voltage |Vcb|: 125 V
     Maximum Collector-Emitter Voltage |Vce|: 125 V
     Maximum Emitter-Base Voltage |Veb|: 6 V
     Maximum Collector Current |Ic max|: 2 A
     Max. Operating Junction Temperature (Tj): 175 °C
     Transition Frequency (ft): 510 MHz
     Collector Capacitance (Cc): 250 pF
     Forward Current Transfer Ratio (hFE), MIN: 25
  
• TO66 case