2N4064 Silicon NPN transistor 300V 10W

2N4064 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 10 W
     Maximum Collector-Base Voltage |Vcb|: 300 V
     Maximum Collector-Emitter Voltage |Vce|: 250 V
     Maximum Emitter-Base Voltage |Veb|: 7 V
     Maximum Collector Current |Ic max|: 1 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 15 MHz
     Collector Capacitance (Cc): 10 pF
     Forward Current Transfer Ratio (hFE), MIN: 40
  
• Case TO131