2N5883 PNP 60V 25A Silicon Transistor 200W

2N5883 PNP 60V 200Watt Silicon Transistor

• Material of Transistor: Si
     Polarity: PNP
     Maximum Collector Power Dissipation (Pc): 200 W
     Maximum Collector-Base Voltage |Vcb|: 60 V
     Maximum Collector-Emitter Voltage |Vce|: 60 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 25 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 4 MHz
     Collector Capacitance (Cc): 800 pF
     Forward Current Transfer Ratio (hFE), MIN: 20
     Package: TO3