2N1012 Germanium NPN epitaxial planar transistor 40V .15W

2N1012 NPN Transistor

• Material of Transistor: Ge
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.15 W
     Maximum Collector-Base Voltage |Vcb|: 40 V
     Maximum Collector-Emitter Voltage |Vce|: 22 V
     Maximum Emitter-Base Voltage |Veb|: 35 V
     Maximum Collector Current |Ic max|: 0.1 A
     Max. Operating Junction Temperature (Tj): 180 °C
     Transition Frequency (ft): 3 MHz
     Collector Capacitance (Cc): 20 pF
     Forward Current Transfer Ratio (hFE), MIN: 40
  
• TO5 case