Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.1 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 1 V Maximum Collector Current |Ic max|: 0.01 A Max. Operating Junction Temperature (Tj): 75 °C Transition Frequency (ft): 50 MHz Collector Capacitance (Cc): 12 pF Forward Current Transfer Ratio (hFE), MIN: 40