2N917 Silicon NPN transistor 30V .2W RF Oscillator

2N917 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.2 W
     Maximum Collector-Base Voltage |Vcb|: 30 V
     Maximum Collector-Emitter Voltage |Vce|: 15 V
     Maximum Emitter-Base Voltage |Veb|: 3 V
     Maximum Collector Current |Ic max|: 0.05 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 500 MHz
     Collector Capacitance (Cc): 1.7 pF
     Forward Current Transfer Ratio (hFE), MIN: 20
  
• TO72 case