2N860 25V 0.05A PNP Ge .15W Transistor

2N860 Transistor

• Material of Transistor: Si
     Polarity: PNP
     Maximum Collector Power Dissipation (Pc): 0.15 W
     Maximum Collector-Base Voltage |Vcb|: 25 V
     Maximum Collector-Emitter Voltage |Vce|: 25 V
     Maximum Emitter-Base Voltage |Veb|: 20 V
     Maximum Collector Current |Ic max|: 0.05 A
     Max. Operating Junction Temperature (Tj): 140 °C
     Transition Frequency (ft): 7 MHz
     Collector Capacitance (Cc): 10 pF
     Forward Current Transfer Ratio (hFE), MIN: 10
  
• TO18 case