2N2210 NPN Power Transistor

2N2210 NPN Silicon Power Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 1 W
     Maximum Collector-Base Voltage |Vcb|: 60 V
     Maximum Collector-Emitter Voltage |Vce|: 45 V
     Maximum Emitter-Base Voltage |Veb|: 7 V
     Maximum Collector Current |Ic max|: 0.5 A
     Max. Operating Junction Temperature (Tj): 200 °C
     Transition Frequency (ft): 100 MHz
     Collector Capacitance (Cc): 15 pF
     Forward Current Transfer Ratio (hFE), MIN: 50
• TO-39 case