Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 1 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 15 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.3 A Max. Operating Junction Temperature (Tj): 100 °C Transition Frequency (ft): 500 MHz Collector Capacitance (Cc): 8 pF