2N2027 200vrm 110A Silicon Controlled Rectifier

2N2027 Silicon Controlled Rectifier

• Maximum peak gate power (P_GM): 15 W 
     Maximum repetitive peak and off-state voltage (V_DRM): 200 V 
     Maximum average on-state current (I_T(AVR)): 70 A 
     Maximum RMS on-state current (I_T(RMS)): 110 A 
     Non repetitive surge peak on-state current (I_TSM): 1400 A 
     Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs 
     Critical rate of rise of off-state voltage (dV/dt): 100 V/µs 
     Maximum operating junction and storage temperature range (T_stg, T_j): -65..150 °C 
     Junction to case thermal resistance (R_TH(j-c)): 0.4 K/W 
     Triggering gate voltage (V_GT): 3 V 
     Peak on-state voltage drop (V_TM): 1.6 V 
     Triggering gate current (I_GT): 100 mA 
     Holding current (I_H): 200 mA
• TO94 case