Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.12 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 75 °C Forward Current Transfer Ratio (hFE), MIN: 20