Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.1 W Maximum Collector-Base Voltage |Vcb|: 6 V Maximum Collector-Emitter Voltage |Vce|: 6 V Maximum Collector Current |Ic max|: 0.05 A Max. Operating Junction Temperature (Tj): 140 °C Transition Frequency (ft): 16 MHz Collector Capacitance (Cc): 14 pF Forward Current Transfer Ratio (hFE), MIN: 12