Material of Transistor: Ge Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.05 W Maximum Collector-Base Voltage |Vcb|: 18 V Maximum Collector-Emitter Voltage |Vce|: 18 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.05 A Max. Operating Junction Temperature (Tj): 75 °C Transition Frequency (ft): 1.2 MHz Collector Capacitance (Cc): 22 pF Forward Current Transfer Ratio (hFE), MIN: 10