GE 2N169A Ge NPN epitaxial planar transistor

2N169A NPN Transistor

• Material of Transistor: Ge
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.055 W
     Maximum Collector-Base Voltage |Vcb|: 25 V
     Maximum Collector-Emitter Voltage |Vce|: 25 V
     Maximum Emitter-Base Voltage |Veb|: 5 V
     Maximum Collector Current |Ic max|: 0.025 A
     Max. Operating Junction Temperature (Tj): 85 °C
     Transition Frequency (ft): 4 MHz
     Collector Capacitance (Cc): 5 pF
     Forward Current Transfer Ratio (hFE), MIN: 50