GE 2N164A Ge NPN epitaxial planar transistor

2N164A NPN Transistor

• Material of Transistor: Ge
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.1 W
     Maximum Collector-Base Voltage |Vcb|: 15 V
     Maximum Collector-Emitter Voltage |Vce|: 15 V
     Maximum Collector Current |Ic max|: 0.02 A
     Max. Operating Junction Temperature (Tj): 85 °C
     Transition Frequency (ft): 4 MHz
     Collector Capacitance (Cc): 5 pF
     Forward Current Transfer Ratio (hFE), MIN: 40