Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.2 W Maximum Collector-Base Voltage |Vcb|: 35 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Emitter-Base Voltage |Veb|: 12 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 85 °C Transition Frequency (ft): 0.6 MHz Forward Current Transfer Ratio (hFE), MIN: 56