Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.225 W Maximum Collector-Base Voltage |Vcb|: 45 V Maximum Collector-Emitter Voltage |Vce|: 35 V Maximum Emitter-Base Voltage |Veb|: 10 V Maximum Collector Current |Ic max|: 0.4 A Max. Operating Junction Temperature (Tj): 100 °C Transition Frequency (ft): 1.5 MHz Collector Capacitance (Cc): 80 pF Forward Current Transfer Ratio (hFE), MIN: 50