Polarity: NPN Material of Transistor: Ge Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.15 W Maximum Collector-Base Voltage |Vcb|: 25 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 15 V Maximum Collector Current |Ic max|: 0.2 A Max. Operating Junction Temperature (Tj): 100 °C Transition Frequency (ft): 2 MHz Collector Capacitance (Cc): 30 pF Forward Current Transfer Ratio (hFE), MIN: 30