Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.225 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 20 V Maximum Collector Current |Ic max|: 0.4 A Max. Operating Junction Temperature (Tj): 85 °C Transition Frequency (ft): 1 MHz Collector Capacitance (Cc): 40 pF Forward Current Transfer Ratio (hFE), MIN: 35