Material of Transistor: Ge Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.15 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Emitter-Base Voltage |Veb|: 2 V Maximum Collector Current |Ic max|: 0.05 A Max. Operating Junction Temperature (Tj): 85 °C Transition Frequency (ft): 1 MHz Collector Capacitance (Cc): 20 pF Forward Current Transfer Ratio (hFE), MIN: 50