Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.17 W Maximum Collector-Base Voltage |Vcb|: 32 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 85 °C Transition Frequency (ft): 0.6 MHz Forward Current Transfer Ratio (hFE), MIN: 90