GE 2N333 SI NPN epitaxial planar transistor

2N333 NPN Transistor

• Material of Transistor: Si
     Polarity: NPN
     Maximum Collector Power Dissipation (Pc): 0.15 W
     Maximum Collector-Base Voltage |Vcb|: 45 V
     Maximum Emitter-Base Voltage |Veb|: 1 V
     Maximum Collector Current |Ic max|: 0.025 A
     Max. Operating Junction Temperature (Tj): 175 °C
     Transition Frequency (ft): 3 MHz
     Collector Capacitance (Cc): 14 pF
     Forward Current Transfer Ratio (hFE), MIN: 20
  
• Box 4