Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.15 W Maximum Collector-Base Voltage |Vcb|: 45 V Maximum Emitter-Base Voltage |Veb|: 1 V Maximum Collector Current |Ic max|: 0.025 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 3 MHz Collector Capacitance (Cc): 14 pF Forward Current Transfer Ratio (hFE), MIN: 10