Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.1 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 35 V Maximum Emitter-Base Voltage |Veb|: 20 V Maximum Collector Current |Ic max|: 0.05 A Max. Operating Junction Temperature (Tj): 160 °C Transition Frequency (ft): 0.12 MHz Collector Capacitance (Cc): 120 pF Forward Current Transfer Ratio (hFE), MIN: 20