GE 2N657 SI NPN 100Volt 1 Watt Transistor

2N657 NPN Transistor

• Maximum Collector Power Dissipation (Pc): 1 W
• Maximum Collector-Base Voltage |Vcb|: 100
• Maximum Collector-Emitter Voltage |Vce|: 10 V
  
• Maximum Emitter-Base Voltage |Veb|: 8 V
  
• Maximum Collector Current |Ic max|: 0.5 A
  
• Max. Operating Junction Temperature (Tj): 75 °C
  
• Transition Frequency (ft): 40 MHz
  
• Collector Capacitance (Cc): 20 pF
  
• Forward Current Transfer Ratio (hFE), MIN: 30