GE 2N636A SI NPN epitaxial planar transistor

2N636A NPN Transistor

• Maximum Collector Power Dissipation (Pc): 0.15 W
• Maximum Collector-Base Voltage |Vcb|: 25 V
• Maximum Collector-Emitter Voltage |Vce|: 20 V
• Maximum Emitter-Base Voltage |Veb|: 25 V
• Maximum Collector Current |Ic max|: 0.3 A
• Transition Frequency (ft): 15 MHz
• Forward Current Transfer Ratio (hFE), MIN: 35