GE 2N541 NPN Transistor

2N541 NPN Transistor designed for low level IF and RF amplifier applications

• Maximum Collector Power Dissipation (Pc): 0.2 W
• Maximum Collector-Base Voltage |Vcb|: 15 V
• Maximum Collector-Emitter Voltage |Vce|: 15 V
• Maximum Emitter-Base Voltage |Veb|: 2 V
• Maximum Collector Current |Ic max|: 0.025 A
• Transition Frequency (ft): 18 MHz
• Forward Current Transfer Ratio (hFE), MIN: 130
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