GE 2N497 Silicon Unijuction Transistor

2N497Transistor NPN Silicon

• 4W Power Dissipation
• Maximum Collector-Base Voltage |Vcb|: 60 V
• Maximum Collector-Emitter Voltage |Vce|: 60 V
• Maximum Emitter-Base Voltage |Veb|: 8 V
• Maximum Collector Current |Ic max|: 0.6 A
• Transition Frequency (ft): 30 MHz
• Box 4